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二氧化硅襯底的全區(qū)域覆蓋的單層二硫化鉬

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公司名稱 泰州巨納新能源有限公司
品牌 2D Semiconductors
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更新時(shí)間 2024/6/3 19:35:44
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單層二硫化鉬

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泰州巨納新能源有限公司(SUNANO ENERGY)于2010年7月成立，是低維材料領(lǐng)域的ling導(dǎo)企業(yè)，也是石墨烯及二維材料術(shù)語國家標(biāo)準(zhǔn)*起草單位、全國納米技術(shù)標(biāo)準(zhǔn)化技術(shù)委員會(huì)低維納米結(jié)構(gòu)與性能工作組SAC/TC279?WG9秘書處單位，建有國家火炬泰州石墨烯研究檢測平臺。
注冊資本人民幣1.1億元，主要從事石墨烯等低維材料的研發(fā)、制備、檢測和應(yīng)用。
研發(fā)團(tuán)隊(duì)主要由留學(xué)英國、美國、法國、新加坡的博士組成，部分成員來自于2010年諾貝爾物理學(xué)獎(jiǎng)小組，客戶遍布*。同時(shí)，管理團(tuán)隊(duì)有豐富的海內(nèi)外成功經(jīng)驗(yàn)。

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供貨周期	現(xiàn)貨	應(yīng)用領(lǐng)域	環(huán)保,化工,能源,綜合

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Thermal oxide (SiO2/Si) substrates
Coverage	Full Coverage Monolayer
Electrical properties	1.85 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Identification. Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates.

2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Smoothness. Atomically smooth surface with roughness < 0.2 nm.

4) Uniformity. Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.

5) Purity. 99.9995% purity as determined by nano-SIMS measurements

6) Reliability. Repeatable Raman and photoluminescence response

7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) Substrate. SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.

9) Defect profile. MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

Supporting datasets [for 100% Full area coverage on SiO2/Si]

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

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