用時(shí)間分辨CL分析彎曲狀態(tài)下氧化鋅微米帶中的激子擴(kuò)散行為：沿微米帶徑向三個(gè)不同激發(fā)區(qū)域的時(shí)間分辨熒光光譜。根據(jù)測(cè)試結(jié)果，可以建立并驗(yàn)證應(yīng)力誘導(dǎo)的激子擴(kuò)散模型。(ACS Nano, 8(4), 3412-3420, 2014)

InGaN/GaN量子阱中局域載流子復(fù)合。(Applied Physics Letters 109, 232103 (2016))

 

在氮化鎵中圍繞單位錯(cuò)缺陷的CL強(qiáng)度與有效壽命。(Applied Physics Letters 109, 042101 (2016))

單根InGaN/GaN核/殼微米柱的時(shí)間分辨CL衰減及CL成像結(jié)果。(Applied Physics Letters 112, 052106 (2018))

附2：Rachel Oliver教授用Attolight陰熒光光譜儀開展的部分研究工作：

[1] T. J. Puchtler, A. Woolf, T. Zhu, D. Gachet, E. L. Hu, R. A. Oliver. Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities. ACS Photonics, 2015, 2, 137-143.

[2] T. Zhu, D. Gachet, F. Tang, W. Y. Fu, F. Oehler, M. J. Kappers, P. Dawson, C. J. Humphreys, R. A. Oliver. Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Appl. Phys. Lett., 2016, 109, 232103.

[3] C. J. Humphreys, F. C-P. Massabuau, S. L. Rhode, M. K. Horton, T. J. O’Hanlon, A. Kovacs, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, R. A. Oliver. Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Microsc. Microanal., 2018 ,4, 4-5.

[4] F. C-P. Massabuau, S. L. Rhode, M. K. Horton, T. J. O’ Hanlon, A. Kovács, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, R. A. Oliver. Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. Nano Lett., 2017, 17, 4846-4852.

[5] F. C-P. Massabuau, P. Chen, S. L. Rhode, M. K. Horton, T. J. O’Hanlon, A. Kov´acs, M. S. Zielinski, M. J. Kappers, R. E. Dunin-Borkowski, C. J. Humphreys, R.A. Oliver. Alloy fluctuations at dislocations in III-Nitrides: identification and impact on optical properties. Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320R (2018)

附3：部分國(guó)內(nèi)家學(xué)者用Attolight陰熒光光譜儀開展的研究工作：

[1] X. Fu, G. Jacopin, M. Shahmohammadi, R. Liu, M. Benameur, J-D. Ganière, J. Feng, W. Guo, Z. Liao, B. Deveaud, D. Yu. Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires. ACS Nano, 2014, 8, 3412-3420.

[2] M. Shahmohammadi, G. Jacopin, X. Fu, J-D, Ganière, D. Yu, B. Deveaud. Exciton hopping probed by picosecond time-resolved cathodoluminescence. Appl. Phys. Lett., 2015, 107, 141101.

[3] Y. Song, L. Zhang, Y. Zeng, L. Qin, Y. Zhou, Y. Ning, L. Wang. Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence. Materials 2018, 11(6), 1049.

[4] X. Xie, B. Li, Z. Zhang, S. Wang, D. Shen. Controlled compensation via nonequilibrium electrons in ZnO. Sci. Rep., 2018, 8, 17020.

(DOI:10.1038/s41598-018-35178-w)

Quantum Design中國(guó)子公司擁有attolight代理權(quán)。用戶可直接聯(lián)系我們購(gòu)買產(chǎn)品，我們竭誠(chéng)為客戶做到滿意的產(chǎn)品資訊和售后服務(wù)。

【產(chǎn)品詳情】

1. CL-STEM陰熒光分析系統(tǒng)

2. 時(shí)間分辨精細(xì)陰熒光分析系統(tǒng)